sbs818 no. a0471-1/6 applications ? high frequency recti cation (switching regulators, converters, choppers) features ? low switching noise ? low forward voltage (i f =2.0a, v f max=0.52v) ? ultrasmall package permitting applied sets to be small and slim (mounting height 0.75mm) speci cations absolute maximum ratings at ta=25c (value per element) parameter symbol conditions ratings unit repetitive peak reverse voltage v rrm 30 v nonrepetitive peak reverse surge voltage v rsm 30 v average output current i o when mounted on ceramic substrate (900mm 2 0.8mm) 2.0 a when mounted on glass epoxy substrate (0.96mm 2 0.03mm) 1.5 a surge forward current i fsm 50hz sine wave, 1 cycle 20 a junction temperature tj --55 to +125 c storage temperature tstg --55 to +125 c package dimensions unit : mm (typ) 7045-004 91912 tkim tc-00002809/51408sb tiim tc-00001363 sanyo semiconductors data sheet http://www.sanyosemi.com/en/network/ ordering number : ENA0471a sbs818 low v f schottky barrier diode 30v, 2.0a recti er product & package information ? package : emh8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection tl 1 : anode1 2 : nc 3 : anode2 4 : anode2(nc) 5 : cathode2 6 : cathode2 7 : cathode1 8 : cathode1 sanyo : emh8 1 4 85 0.125 0.2 0.2 2.1 1.7 0.5 2.0 0.2 0.75 0.05 sbs818-tl-e sd lot no. 234 1 765 8 *: terminal 4 is used for the purposes such as test. al- though it is connected to anode 2, please handle it as nc terminal.
sbs818 no. a0471-2/6 electrical characteristics at ta=25c (value per element) parameter symbol conditions ratings unit min typ max reverse voltage v r i r =1ma 30 v forward voltage v f 1i f =1.0a 0.37 0.42 v v f 2i f =1.5a 0.42 0.47 v v f 3i f =2.0a 0.46 0.52 v reverse current i r v r =15v 350 a interterminal capacitance c v r =10v, f-1mhz 30 pf reverse recovery time t rr i f =i r =100ma, see speci ed test circuit. 10 ns thermal resistance rth(j-a)1 when mounted in cu-foiled area of 900mm 2 0.8mm on glass epoxy substrate 100 c / w rth(j-a)2 when mounted on ceramic substrate (900mm 2 0.8mm) 65 c / w *: the absolute maximum ratings and electrical characteristics refer to those between terminal 1 and terminal 7 (or 8), and bet ween terminal 3 and terminal 5 (or 6). t rr test circuit ordering information device package shipping memo sbs818-tl-e emh8 3,000pcs./reel pb free duty 10% 50 100 10 --5v t rr 10 s 100ma 100ma 10ma forward voltage, v f -- v forward current, i f -- a i f -- v f reverse voltage, v r -- v i r -- v r reverse current, i r -- a 0 0.05 0.15 it12197 10 0 35 it12198 0.001 2 3 5 7 2 3 5 0.01 7 2 3 5 0.1 0.50 0.25 0.35 0.45 0.10 0.20 0.30 0.40 1.0e-01 1.0e-02 1.0e+00 1.0e+01 1.0e+02 1.0e+03 1.0e+04 1.0e+06 1.0e+05 20 15 52530 ta=1 25 c 7 5 c 25 c 0 c --25 c ta=1 25 c 1 00 c 75 c 50 c 25 c 0 c --25 c 50 c 1 00 c 7 2 3 1.0
sbs818 no. a0471-3/6 0 0.5 1.5 1.0 2.0 2.5 0 25 50 125 100 75 150 it13215 (3) (5) (1) (2) (4) 0 0.5 1.5 1.0 2.0 2.5 0 25 50 125 100 75 150 it13216 (3) (5) (1) (2) (4) 0.01 23 7 0.1 0 52 2 37 1.0 5 24 20 16 12 8 4 3 it13214 0.1 1.0 10 100 10 2 3 5 2 3 5 7 23 57 23 3 55 72 it13217 average output current, i o -- a p f (av) -- i o average forward power dissipation, p f (av) -- w 180 360 sine wave 360 rectangular wave (1)rectangular wav e =60 (2)rectangular wav e =120 (3)rectangular wav e =180 (4)sine wav e =180 ta -- i o 360 180 360 rectangular wave sine wave ambient temperature, ta -- c average output current, i o -- a p r (av) -- v r average reverse voltage, v r -- v (1)rectangular wav e =300 (2)rectangular wav e =240 (3)rectangular wav e =180 (4)sine wav e =180 rectangular wave sine wave 360 v r 180 360 v r average reverse power dissipation, p r (av) -- w (2) (3) (1) 0 0 0.5 1.6 1.4 1.2 0.2 0.4 0.6 0.8 1.0 2.5 2.0 1.0 1.5 it12199 (4) 0 0.0e+00 1.0e--03 2.0e--03 3.0e--03 10 5 3.5e--03 5.0e--04 1.5e--03 2.5e--03 20 15 25 30 35 it12200 (1) (2) (3) (4) i fsm -- t time, t -- s surge forward current, i fsm (peak) -- a i s 20ms t current waveform 50hz sine wave c -- v r reverse voltage, v r -- v interterminal capacitance, c -- pf f=1mhz (1)rectangular wav e =60 (2)rectangular wav e =120 (3)rectangular wav e =180 (4)sine wav e =180 (5)dc ta -- i o 360 180 360 rectangular wave sine wave ambient temperature, ta -- c average output current, i o -- a (1)rectangular wav e =60 (2)rectangular wav e =120 (3)rectangular wav e =180 (4)sine wav e =180 (5)dc
sbs818 no. a0471-4/6 embossed taping speci cation sbs818-tl-e
sbs818 no. a0471-5/6 outline drawing land pattern example sbs818-tl-e mass (g) unit 0.008 * for reference mm unit: mm 0.4 0.3 0.5 1.9
sbs818 ps no. a0471-6/6 this catalog provides information as of september, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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